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| MS1261 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS * * * * * * * Features 175 MHz 12.5 VOLTS POUT = 15 WATTS Gp = 12 dB MINIMUM INPUT IMPEDANCE MATCHING COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1261 is a Class C 12.5V epitaxial silicon NPN planar transistor designed primarily for UHF communications. This devices utilizes a gold metalized, emitter ballasted die geometry for superior reliability and infinite VSWR capability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol VCBO VCEO VCES VEBO IC PDISS TJ TSTG Parameter Value 36 18 36 4.0 2.5 34 +200 -65 to +150 Unit V V V V A W C C Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Thermal Data RTH(J-C) Thermal Resistance Junction-case 8.75 C/W 053-7059 Rev - 10-2002 MS1261 STATIC 25 ELECTRICAL SPECIFICATIONS (Tcase = 25C) Symbol BVCES BVCEO BVEBO ICBO HFE IC = 50 mA IC = 15 mA IE = 2.5 mA VCE = 15 V VCE = 5 V Test Conditions Min. VBE = 0V IC = 0mA IE = 0mA IC = 250mA 36 18 4.0 --20 Value Typ. ----------- Max. ------1 200 Unit V V V mA --- DYNAMIC Symbol POUT c GP COB f = 175 MHz f = 175 MHz f = 175 MHz f = 1 MHz Test Conditions Min. PIN = 1W PIN = 1W PIN = 1W VCB = 12.5V VCE = 12.5V VCE = 12.5V VCE = 12.5V 15 60 12 --- Value Typ. --------- Max. ------45 Unit W % dB pf IMPEDANCE DATA FREQ 175 MHz POUT = 15W VCC = 12.5V ZIN() ) 1.2 - j0.4 ZCL() ) 5.2 + j1.1 053-7059 Rev - 10-2002 MS1261 PACKAGE MECHANICAL DATA 053-7059 Rev - 10-2002 |
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